Hard superconducting gap in insb nanowires
WebJul 6, 2024 · ¨. et al. Hard superconducting gap in InSb nanowires. Nano Lett. 17, 2690–2696 (2024). 26. Gu ¨l, O ... and obtain a hard gap in the InSb nanowire. Magnetic field stability of NbTiN allows the ... WebApr 15, 2024 · Recently, β-Sn shells have been grown on InSb nanowires, inducing a hard superconducting gap [12]. The large band gap semiconductor CdTe is a promising candidate to serve as a tunnel barrier. ...
Hard superconducting gap in insb nanowires
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WebFeb 8, 2024 · The magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (~ 0.5 Tesla), a …
WebFeb 8, 2024 · This study systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties and provides a guideline to induce superconductivity in various experimental platforms such as semiconductor Nanowires, two-dimensional electron gases, and … WebMar 20, 2024 · We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near perfect transmission of …
WebJan 12, 2015 · This improved synthesis leads to the creation of a hard superconducting gap with no subgap states. ... InSb and GaAs semiconductor nanowires grown in the conventional 〈111 ... WebWe have systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties. Step by …
WebWe find that InSb nanowires coupled to tin exhibit a hard induced superconducting gap with a magnitude of up to 700 µeV. Superconductivity persists to magnetic fields up to 4 Tesla for 15 nm thick Sn shells. Islands of tin do exhibit 2e-periodic charging patterns, where e is the elementary charge. These results are obtained even though Sn and InSb
WebHere, we report a hard superconducting gap induced by the proximity effect in a semiconductor, using epitaxial InAs-Al semiconductor-superconductor nanowires. The … datafit scilabWebJul 6, 2024 · Gül, Ö. et al. Hard superconducting gap in InSb nanowires. Nano Lett. 17, 2690–2696 (2024). Google Scholar Gül, Ö. et al. Towards high mobility InSb nanowire devices. Nanotechnology 26 ... datafitaWebExplore 223 research articles published on the topic of “Cooper pair” in 2024. Over the lifetime, 4825 publication(s) have been published within this topic receiving 101244 citation(s). martello thor attrezziWebA hard superconducting gap is reported induced by the proximity effect in a semiconductor, using epitaxial InAs-Al semiconductor-superconductor nanowires. … martellotta antonellaWebDec 11, 2024 · The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard superconducting gap in the range 600-700 micro-eV. martellotta patriciaWebApr 4, 2024 · To date, tunneling spectroscopy studies on proximitized InSb nanowires have reported a significant density of states within the superconducting gap, a so-called soft … martellotta forbachWebThe magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (∼0.5 T), a requirement for topological superconductivity in one-dimensional systems. Our study provides a guideline to induce superconductivity in various experimental platforms such as semiconductor ... datafit软件